* ---------------------------------------------------------------------- .MODEL NMOD NMOS LEVEL=49 * *** Threshold voltage related model parameters *** +K1 =8.834e-01 +K2 =-4.25e-02 K3 =6.535e+00 K3B =-2.02e+00 +NCH =1.059e+17 VTH0 =9.331e-01 +VOFF =-1.16e-01 DVT0 =3.561e+00 DVT1 =8.652e-01 +DVT2 =-2.50e-01 KETA =-4.48e-02 +PSCBE1 =3.616e+08 PSCBE2 =1.020e-05 +DVT0W =-2.98e+00 DVT1W =1.306e+06 DVT2W =-9.24e-03 * *** Mobility related model parameters *** +UA =1.000e-12 UB =1.709e-18 UC =-3.60e-11 +U0 =3.932e+02 * *** Subthreshold related parameters *** +DSUB =5.000e-01 ETA0 =1.008e-02 ETAB =-1.72e-02 +NFACTOR=6.529e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =9.549e-01 +PDIBLC1=2.750e-02 PDIBLC2=1.069e-03 DROUT =3.510e-01 +A0 =9.550e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =8.665e+04 AGS =1.785e-01 +B0 =2.652e-07 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=2.306e-01 * *** Geometry modulation related parameters *** +W0 =3.151e-08 DLC =1.449e-07 +DWC =-8.94e-09 DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.90e+00 +KT1 =-4.20e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =4.500e-10 CGSO =4.500e-10 CGBO =1.600e-10 +CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =1.687e+03 +CDSC =0.000e+00 CDSCB =0.000e+00 CDSCD =0.000e+00 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =2.234e-04 * *** Process and parameters extraction related model parameters *** +TOX =1.350e-08 NGATE =0.000e+00 +NLX =1.000e-10 +XL =1.660e-07 XW =-1.19e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.343e+00 KF =6.896e-27 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12 +NLEV =0 * *** Common extrinsic model parameters *** +ACM =2 +RD =0.000e+00 RS =0.000e+00 RSH =3.571e+01 +RDC =0.000e+00 RSC =0.000e+00 +LINT =1.449e-07 WINT =-8.94e-09 +LDIF =0.000e+00 HDIF =8.000e-07 WMLT =1.000e+00 +LMLT =1.000e+00 XJ =3.000e-07 +JS =2.000e-05 JSW =0.000e+00 IS =0.000e+00 +N =1.000e+00 NDS =1000. VNDS =-1.000e+00 +CBD =0.000e+00 CBS =0.000e+00 CJ =4.750e-04 +CJSW =5.375e-10 FC =0.000e+00 +MJ =4.400e-01 MJSW =2.500e-01 TT =0.000e+00 +PB =8.400e-01 PHP =9.400e-01 * ---------------------------------------------------------------------- .MODEL PMOD PMOS LEVEL=49 * *** Threshold voltage related model parameters *** +K1 =6.347e-01 +K2 =-2.13e-02 K3 =1.485e+01 K3B =-1.40e+00 +NCH =6.468e+16 VTH0 =-8.97e-01 +VOFF =-1.12e-01 DVT0 =2.066e+00 DVT1 =5.015e-01 +DVT2 =-3.99e-02 KETA =-7.67e-03 +PSCBE1 =5.000e+08 PSCBE2 =1.000e-10 +DVT0W =0.000e+00 DVT1W =0.000e+00 DVT2W =0.000e+00 * *** Mobility related model parameters *** +UA =6.770e-11 UB =1.040e-18 UC =-1.16e-10 +U0 =1.050e+02 * *** Subthreshold related parameters *** +DSUB =4.379e-01 ETA0 =4.843e-02 ETAB =-3.50e-05 +NFACTOR=2.220e-01 * *** Saturation related parameters *** +EM =4.100e+07 PCLM =1.459e+00 +PDIBLC1=5.872e-03 PDIBLC2=3.394e-04 DROUT =7.861e-02 +A0 =7.522e-01 A1 =0.000e+00 A2 =1.000e+00 +PVAG =0.000e+00 VSAT =9.496e+04 AGS =1.746e-01 +B0 =3.421e-07 B1 =0.000e+00 DELTA =1.000e-02 +PDIBLCB=-3.18e-01 * *** Geometry modulation related parameters *** +W0 =7.289e-07 DLC =9.927e-08 +DWC =3.878e-08 DWB =0.000e+00 DWG =0.000e+00 +LL =0.000e+00 LW =0.000e+00 LWL =0.000e+00 +LLN =1.000e+00 LWN =1.000e+00 WL =0.000e+00 +WW =0.000e+00 WWL =0.000e+00 WLN =1.000e+00 +WWN =1.000e+00 * *** Temperature effect parameters *** +AT =3.300e+04 UTE =-1.40e+00 +KT1 =-5.70e-01 KT2 =2.200e-02 KT1L =0.000e+00 +UA1 =0.000e+00 UB1 =0.000e+00 UC1 =0.000e+00 +PRT =0.000e+00 * *** Overlap capacitance related and dynamic model parameters *** +CGDO =4.500e-10 CGSO =4.500e-10 CGBO =1.600e-10 +CGDL =0.000e+00 CGSL =0.000e+00 CKAPPA =6.000e-01 +CF =0.000e+00 ELM =5.000e+00 +XPART =1.000e+00 CLC =1.000e-15 CLE =6.000e-01 * *** Parasitic resistance and capacitance related model parameters *** +RDSW =3.796e+03 +CDSC =0.000e+00 CDSCB =0.000e+00 CDSCD =2.171e-04 +PRWB =0.000e+00 PRWG =0.000e+00 CIT =3.231e-04 * *** Process and parameters extraction related model parameters *** +TOX =1.350e-08 NGATE =0.000e+00 +NLX =2.784e-07 +XL =1.130e-07 XW =-3.17e-07 * *** Substrate current related model parameters *** +ALPHA0 =0.000e+00 BETA0 =3.000e+01 * *** Noise effect related model parameters *** +AF =1.772e+00 KF =1.126e-26 EF =1.000e+00 +NOIA =1.000e+20 NOIB =5.000e+04 NOIC =-1.40e-12 +NLEV =0 * *** Common extrinsic model parameters *** +ACM =2 +RD =0.000e+00 RS =0.000e+00 RSH =8.149e+01 +RDC =0.000e+00 RSC =0.000e+00 +LINT =9.927e-08 WINT =3.878e-08 +LDIF =0.000e+00 HDIF =8.000e-07 WMLT =1.000e+00 +LMLT =1.000e+00 XJ =3.000e-07 +JS =2.000e-05 JSW =0.000e+00 IS =0.000e+00 +N =1.000e+00 NDS =1000. VNDS =-1.000e+00 +CBD =0.000e+00 CBS =0.000e+00 CJ =7.500e-04 +CJSW =4.125e-10 FC =0.000e+00 +MJ =4.400e-01 MJSW =2.400e-01 TT =0.000e+00 +PB =8.400e-01 PHP =9.400e-01 * ----------------------------------------------------------------------