Sample Fabrication
Substrate
n-SiSubstrate Type
(100) n-Si 1e14, 50keV
Shots: 1a, 1b, 1c, 1d
All 4 shots were okay. All of them 2.5x2.5 mm each.
, ρ = 1-10 Ω-cm
Implantation conditions
Au, 50 keV, 1e14 /cm2 dose
Pulsed laser melting
Spot | Spot size | Laser used | Shooting conditions | Result |
|---|---|---|---|---|
A | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 |
|
B | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 |
|
C | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 |
|
D | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
E | 2.5x2.5 mm2, masked | Harvard YAG, 355 nm | 1 shot @ 0.7 J/cm2 | good |
Measurements and processing
Sample 1A
...
- 6/4/2012 UV-VIS reflection measurement
20120604 UV-VIS reflection Au 1a.Sample.Raw.csv
- 6/5/2012 UV-VIS transmission measurement
20120605 UV-VIS transmission Au 1a.Sample.Raw.csv
- 6/
...
- 13/2012
...
- Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
- 7/10/2012 Retook UV-VIS after tool lamp change
20120709 Au UV-VIS.xlsx
Sample 1B
- 6/13
...
- /2012
...
- Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
Sample 1D
- 6/5/2012 Raman measurements
Sample 1D raman.xlsx
Raman measurements indicate that laser melted layer is single crystal. Main LO peak is located at about 530 cm-1, which would indicate compressive strain of about 1.5%.