This is the home of the MURI Graphene Fabrication space.
1) Decreasing Contact resistance:
- Right e-beam dose to minimize residue after development.
-Development times. Test: AFM before spinning and after development.
- Pumping before evaporation: Heating? How long? Outgassing issues?
- Is UV ozone before evaporation good? Does it damage graphene? What
parameters (direct UV exposure, dark exposure, time, etc)?
- What metals work best? Under what conditions?
2) Suspending Graphene and Graphene Gates:
- CPD or not?
- Electrode thickness and metals?
- How to prevent rippling (best geometry)?
3) Graphene Quality:
- Are different sources of graphite equally good?
- Substrate cleaning recipes
- Deposition strategies
- Current and/or heat annealing? Recipes and parameters.
- CVD versus exfoliated graphene
4) Etching Graphene and graphene Nanoribbon formation O2 or Ar plasma? PMMA, HSQ, and other masks
Catalytic methods (Ni and other nanoparticles, etc)
5) Dielectrics (substrates, ALD, e-beam deposited, etc)
How to improve SiO2?
- How to get ALD to work reliably (NO2 functionalization? thin oxide seed?)?
- Does high-K really improve mobility?
6) Lift-off issues and after-lift-off cleaning
- Best lift-off recipes, best solvent? (warm/cold acetone, other
resist strippers?)
- After lift-off cleaning: annealing in forming gas, what temperature,
how long? What happens to contacts?