Sample Fabrication
Substrate
n-Si(100), ρ = 1-10 Ω-cm
Implantation conditions
Au, 50 keV, 5e14 /cm2 dose
Pulsed laser melting
Spot |
Spot size |
Laser used |
Shooting conditions |
Result |
|---|---|---|---|---|
A |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
B |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
dirty spot, bad TRR |
C |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
D |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
E |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
Measurements and Processing
Sample 2A
- 6/4/2012 UV-VIS reflection measurement on crystalline and amorphous spot
20120604 UV-VIS reflection Au 2a.Sample.Raw.csv
20120604 UV-VIS reflection Au 2a amorphous.Sample.Raw.csv
- 6/5/2012 UV-VIS transmission measurement on crystalline and amorphous spot
20120605 UV-VIS transmission Au 2a.Sample.Raw.csv
20120605 UV-VIS transmission Au 2a amorphous.Sample.Raw.csv - 7/10/2012 Retook UV-VIS after tool lamp change
20120709 Au UV-VIS.xlsx
Sample 2B
- 6/13/2012 FIB-cut TEM sample from clean, uniform-looking area. Bottom (relative to shooting maps) 100 um of spot is now gallium-irradiated.
AuSi2b_ThinnedTEM.tif
- 6/14/2012 SEM and EBSD. No evidence of breakdown or faulting. EBSD shows good (100) oriented single-crystal throughout.
Spot 2b tilt 2.tif
Spot 2b 90kx.tif
Spot 2b 300kx.tif
Spot 2b failed fib crater.tif
- 6/15/2012 TEM. FIB sample is unpolished at present, so visible amorphized regions are present on faces of coupon. Nevertheless, sample is single-crystalline and free of stacking faults and cellular breakdown.
Lowmag offaxis 8.jpg
Very low mag.jpg
Lowmag offaxis 6.jpg
Highmag offaxis 3.jpg
FFT of Highmag offaxis 3.jpg
Highmag offaxis 4.jpg
FFT of Highmag offaxis 4.jpg
Highmag offaxis 5.jpg
FFT of Highmag offaxis 5.jpg
Highmag offaxis 6.jpg
FFT of Highmag offaxis 6.jpg
Highmag offaxis 8.jpg
FFT of Highmag offaxis 8.jpg - 7/26/2012 IV on diode, taken with Keithley 4200 after instrument autocalibration. Good rectifying behavior is observed only for diode sample 2b (n-Si, (100)). Diode sample 3a (p-type, (111)) does not rectify.
20120726 Au IV diode.xlsx
IV measurement between the top Ti/Ni/Ag contacts is performed. Nonlinear IV curve happens for large current/voltage range. For lower IV range, the IV curve between two contacts is linear. However, the voltage between the other contact pair is always nonlinear.
20120725 Au2b IV topcontact.xlsx - 7/31/2012 Analysis on IV data between the top contacts. The Au:Si layer seems to be very resistive, causing a significant portion of the current to flow through the diode and the substrate instead of flowing through the hyperdoped region.
Au2b Equivalent Circuit.pdf - 9/14/2012 Steady state photoconductivity on the Au:Si clover leaf using monochromator light.
20120913_IV31_all_illumination.xlsx - 9/28/2012 Transient nanosecond pulse laser photoconductivity on the Au:Si clover leaf
20120928 AuSi2b Transient PC Data.xlsx - 2/11/2013 SIMS measurement of Au concentration before and after PLM. Includes samples 1B, 2B, and 5A.
- SiAu SIMS Benet.xlsx
- 2/11/2013 Summary of RBS channeling performed on samples before and after PLM. Includes samples 1B, 2B, and 5A.
- SiAu Benet RBS results.pptx
Sample 2D
- 6/5/2012 Raman measurements
Sample 2D raman.xlsx - 10/22/2012 Transient microwave reflectivity
Si-Au UV transient PC.xlsx