Sample Fabrication
Substrate # Need update
n-Si(100), ρ = 1-10 Ω-cm
Implantation conditions
Au, 50 keV, 6e15 /cm2 dose
Pulsed laser melting # Need update
Spot |
Spot size |
Laser used |
Shooting conditions |
Result |
|---|---|---|---|---|
A |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
B |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
dirty spot, bad TRR |
C |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
D |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
E |
2.5x2.5 mm2, masked |
Harvard YAG, 355 nm |
1 shot @ 0.7 J/cm2 |
good |
Measurements and Processing
Sample 11I
- 9/26/2012 UV-VIS transmission and measurement
20120926 AuSi Sample 6-11 UV-VIS.xlsx - 2/28/2013 1x1mm Device Active Area, 1550nm Laser Diode, Photodiode Responsivity Mapping
