Sample Fabrication

p-Si(111), ρ = 1000 Ω-cm

Au, 50 keV, 1e14 /cm2 dose

Spot	Spot size	Laser used	Shooting conditions	Result
A	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	bad mask alignment
B	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	bad mask alignment
C	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good
D	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good
E	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good
F	2.5x2.5 mm2, masked	Harvard YAG, 355 nm	1 shot @ 0.7 J/cm2	good

Measurements and Processing

6/13/2012 Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
6/16/2012 Remove resist
7/26/2012 IV on diode, taken with Keithley 4200 after instrument autocalibration. Good rectifying behavior is observed only for diode sample 2b (n-Si, (100)). Diode sample 3a (p-type, (111)) does not rectify.
20120726 Au IV diode.xlsx

6/13/2012 Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
6/16/2012 Remove resist

6/13/2012 Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
6/16/2012 Remove resist