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Sample Fabrication

Substrate

p-Si(111), ρ = 1000 Ω-cm

Implantation conditions

Au, 50 keV, 1e14 /cm2 dose

Pulsed laser melting

Spot

Spot size

Laser used

Shooting conditions

Result

A

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

bad mask alignment

B

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

bad mask alignment

C

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

D

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

E

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

F

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

Measurements and Processing

Sample 3A
  • 6/13/2012          Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
  • 6/16/2012          Remove resist
  • 7/26/2012          IV on diode, taken with Keithley 4200 after instrument autocalibration. Good rectifying behavior is observed only for diode sample 2b (n-Si, (100)). Diode sample 3a (p-type, (111)) does not rectify.
    20120726 Au IV diode.xlsx
Sample 3B
  • 6/13/2012          Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
  • 6/16/2012          Remove resist
Sample 3C
  • 6/13/2012          Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
  • 6/16/2012          Remove resist
Sample 3D
Sample 3E
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