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Sample Fabrication

Substrate

n-Si(100), ρ = 1-10 Ω-cm

Implantation conditions

Au, 50 keV, 1e14 /cm2 dose

Pulsed laser melting

Spot

Spot size

Laser used

Shooting conditions

Result

A

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

 

B

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

 

C

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

 

D

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

E

2.5x2.5 mm2, masked

Harvard YAG, 355 nm

1 shot @ 0.7 J/cm2

good

Measurements and processing

Sample 1A
Sample 1B
  • 6/13/2012          Spin photoresist and bake at 115 C for 1 minute to protect sample from debris during laser cut
Sample 1D
  • 6/5/2012            Raman measurements
    Sample 1D raman.xlsx
    Raman measurements indicate that laser melted layer is single crystal. Main LO peak is located at about 530 cm-1, which would indicate compressive strain of about 1.5%.


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